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| Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm s Features q q q 4.50.1 1.60.2 1.50.1 1.0-0.2 +0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 0.40.08 0.50.08 1.50.1 3.00.15 4.0-0.20 0.40.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings -30 -20 -7 -7 -4 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC-62 Mini Power Type Package Marking symbol : I Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE fT Cob *1 Conditions VCB = -30V, IE = 0 VEB = -7V, IC = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = 1MHz min typ max -100 -100 Unit nA nA V V V -30 -20 -7 120 - 0.6 120 40 *2 315 -1 V MHz pF Pulse measurement VCE(sat) *1h FE Rank classification Rank hFE Q 120 ~ 205 IQ R 180 ~ 315 IR Marking Symbol 2.50.1 +0.25 1 Transistor PC -- Ta 1.6 1200 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 1000 -10 IB=-200A 800 -180A -160A -140A -120A -100A 400 -80A -60A 200 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 -40A -20A 0 0 - 0.4 - 0.8 2SB1073 IC -- VCE -12 VCE=-2V IC -- VBE Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 Collector current IC (mA) Collector current IC (A) -8 25C -6 Ta=75C -25C 600 -4 -2 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 Ta=75C 25C IC/IB=30 Ta=25C 600 hFE -- IC 120 Cob -- VCB Collector output capacitance Cob (pF) VCE=-2V IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 100 400 Ta=75C 300 25C -25C 80 - 0.3 - 0.1 - 0.03 -25C - 0.01 60 200 40 100 20 - 0.003 - 0.001 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
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